Resistivity model for both paramagnetic and ferromagnetic phases

Abstract

The resistivity, $\rho$ as a function of temperature and ionization energy (doping) and magnetization respectively is derived with further confinements from spin-disorder scattering. The computed $T_{crossover}$ below $T_C$ and carrier density in Ga${}_{1-x}$Mn${}_x$As system are 8-12 K and 10${}^{19}$ cm${}^{-3}$, remarkably identical with the experimental values of 10-12 K and 10${}^{18}-10^{20}$ cm${}^{-3}$ respectively.

Updated Refs