Crossover from tunneling to incoherent (bulk) transport in a correlated nanostructure
arXiv:cond-mat/0401100 · doi:10.1063/1.1650872
Abstract
We calculate the junction resistance for a metal-barrier-metal device with the barrier tuned to lie just on the insulating side of the metal-insulator transition. We find that the crossover from tunneling behavior in thin barriers at low temperature to incoherent transport in thick barriers at higher temperature is governed by a generalized Thouless energy. The crossover temperature can be estimated from the low temperature resistance of the device and the bulk density of states of the barrier.
4 pages, 3 figures, to appear in Applied Physics Letters
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