Exciton-LO-phonon dynamics in InAs/GaAs quantum dots: Effects of zone-edge phonon damping
arXiv:cond-mat/0312256 · doi:10.1103/PhysRevB.71.115309
Abstract
The dynamics of an exciton-LO-phonon system after an ultrafast optical excitation in an InAs/GaAs quantum dot is studied theoretically. Influence of anharmonic phonon damping and its interplay with the phonon dispersion is analyzed. The signatures of the zone-edge decay process in the absorption spectrum and time evolution are highlighted, providing a possible way of experimental investigation on phonon anharmonicity effects.
arXiv comment10 pages, 2 figures
References in corpus (5)
- Resonant nature of phonon-induced damping of Rabi oscillations in quantum dots
- Optimal strategy for a single-qubit gate and trade-off between opposite types of decoherence
- Calculation of pure dephasing for excitons in quantum dots
- Coherent Control for a Two-level System Coupled to Phonons
- Damping of Rabi oscillations in quantum dots due to lattice dynamics
Cited by in corpus (4)
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- Conductance Phases in Aharonov-Bohm Ring Quantum Dots