Correlations between pressure and bandwidth effects in metal-insulator transitions in manganites

Abstract

The effect of pressure on the metal-insulator transition in manganites with a broad range of bandwidths is investigated. A critical pressure is found at which the metal-insulator transition temperature, T${}_{MI}$, reaches a maximum value in every sample studied. The origin of this universal pressure and the relation between the pressure effect and the bandwidth on the metal-insulator transition are discussed.

References in corpus (3)

• Effects of Pressure on Electron Transport and Local Structure of Manganites: Low to High Pressure Regime
• Transport and structural study of pressure-induced magnetic states in Nd0.55Sr0.45MnO3 and Nd0.5Sr0.5MnO3
• Pressure Induced Reentrant Electronic and Magnetic State in Pr0.7Ca0.3MnO3 Manganite

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• Magnetic Field Melting of the Charge-Ordered State of La0.5Ca0.5MnO3: A Local Structure Perspective
• High pressure Raman study of La${}_{1-x}$Ca${}_x$MnO${}_{3-\delta }$ manganites
• Emerging interfacial magnetization in isovalent manganite heterostructures driven by octahedral coupling