Quantum Pumping and Quantized Magnetoresistance in a Hall Bar

Abstract

We show how a dc current can be generated in a Hall bar without applying a bias voltage. The Hall resistance $R_H$ that corresponds to this pumped current is quantized, just as in the usual integer quantum Hall effect (IQHE). In contrast with the IQHE, however, the longitudinal resistance $R_{xx}$ does not vanish on the plateaus, but equals the Hall resistance. We propose an experimental geometry to measure the pumped current and verify the predicted behavior of $R_H$ and $R_{xx}$.

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References in corpus (6)

• Quantum Transport in Semiconductor Nanostructures
• Floquet scattering theory of quantum pumps
• Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out
• Mesoscopic effects in adiabatic spin pumping
• Floquet scattering in parametric electron pumps
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• Quantum Pumping and Nuclear Polarization in the Integer Quantum Hall Regime
• Resolving the order parameter of High-T${}_c$ Superconductors through quantum pumping spectroscopy