Conductance oscillations in strongly correlated fractional quantum Hall line junctions
arXiv:cond-mat/0309361 · doi:10.1103/PhysRevB.69.085307
Abstract
We present a detailed theory of transport through line junctions formed by counterpropagating single-branch fractional-quantum-Hall edge channels having different filling factors. Intriguing transport properties are exhibited when strong Coulomb interactions between electrons from the two edges are present. Such strongly correlated line junctions can be classified according to the value of an effective line-junction filling factor n that is the inverse of an even integer. Interactions turn out to affect transport most importantly for n=1/2 and n=1/4. A particularly interesting case is n=1/4 corresponding to, e.g., a junction of edge channels having filling factor 1 and 1/5, respectively. We predict its differential tunneling conductance to oscillate as a function of voltage. This behavior directly reflects the existence of novel Majorana-fermion quasiparticle excitations in this type of line junction. Experimental accessibility of such systems in current cleaved-edge overgrown samples enables direct testing of our theoretical predictions.
arXiv comment2 figures, 10 pages, RevTex4, v2: added second figure for clarity
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- Edge State Tunneling in a Split Hall Bar Model
- Equilibration between edge states in the fractional quantum Hall effect regime at high imbalances
- Coherent-Incoherent Crossover of Charge and Neutral Mode Transport as Evidence for the Disorder-Dominated Fractional Edge Phase
- Edge Magnetoplasmons in Quantum Hall Line Junction Systems
- Separately contacted edge states at high imbalance in the integer and fractional quantum Hall effect regime
- Temperature dependence of Coulomb drag between finite-length quantum wires
- Tunneling in Fractional Quantum Hall line junctions
- Comment on "Strongly correlated Fractional Quantum Hall line junction"
- Electrostatics of Edge States of Quantum Hall Systems with Constrictions: Metal--Insulator Transition Tuned by External Gates
- Metal-Insulator Transition Tuned by External Gates in Hall Systems with Constrictions
- AC conductivity of a quantum Hall line junction
- Reply to Comment on "Strongly Correlated Fractional Quantum Hall Line Junctions"