Switching Current vs. Magnetoresistance in Magnetic Multilayer Nanopillars
arXiv:cond-mat/0309191 · doi:10.1063/1.1651645
Abstract
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the electrodes, giving increased magnetoresistance. Second, we insert a spacer with a short spin-diffusion length between the magnetic layers, decreasing the magnetoresistance. Third, we vary the angle between layer magnetizations. In all cases, we find an approximately linear dependence between magnetoresistance and inverse switching current. We give a qualitative explanation for the observed behaviors, and suggest some ways in which the switching currents may be reduced.
3 pages, 4 figures
References in corpus (4)
- Current-Driven Magnetic Excitations in Permalloy-Based Multilayer Nanopillars
- Thermally-Activated Magnetic Reversal Induced by a Spin-Polarized Current
- Spin-transfer in diffusive ferromagnet-normal metal systems with spin-flip scattering
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Cited by in corpus (14)
- Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review
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- Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys
- Influence Of Current Leads On Critical Current For Spin Precession In Magnetic Multilayers
- Manipulating Current-Induced Magnetization Switching
- Microwave excitations associated with a wavy angular dependence of the spin transfer torque : model and experiments
- Charge pumping and the colored thermal voltage noise in spin valves
- Current-Driven Switching in Magnetic Multilayer Nanopillars
- Ballistic vs Diffusive Transport in Current-Induced Magnetization Switching
- Effect of spin diffusion on spin torque in magnetic nanopillars
- Current-induced reversal in magnetic nanopillars passivated by silicon