Temperature Dependence of Zero-Bias Resistances of a Single Resistance-Shunted Josephson Junction

Abstract

Zero-bias resistances of a single resistance-shunted Josephson junction are calculated as a function of the temperature by means of the path-integral Monte Carlo method in case a charging energy $E_{\mathrm{C}}$ is comparable with a Josephson energy $E_{\mathrm{J}}$. The low-temperature behavior of the zero-bias resistance changes around $\alpha =R_{\mathrm{Q}}/R_{\mathrm{S}}=1$, where $R_{\mathrm{S}}$ is a shunt resistance and $R_{\mathrm{Q}}=h/(2e{)}^2$. The temperature dependence of the zero-bias resistance shows a power-law-like behavior whose exponent depends on $E_{\mathrm{J}}/E_{\mathrm{C}}$. These results are compared with the experiments on resistance-shunted Josephson junctions.

References in corpus (2)

• "Superconductor-Insulator transition" in a single Josephson junction
• Superconductor-insulator quantum phase transition in a single Josephson junction

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