X-ray photoemission study of NiS_{2-x}Se_x (x = 0.0 - 1.2)

Abstract

Electronic structure of NiS_{2-x}Se_x system has been investigated for various compositions (x) using x-ray photoemission spectroscopy. An analysis of the core level as well as the valence band spectra of NiS_2 in conjunction with many-body cluster calculations provides a quantitative description of the electronic structure of this compound. With increasing Se content, the on-site Coulomb correlation strength (U) does not change, while the band width W of the system increases, driving the system from a covalent insulating state to a pd-metallic state.

19 pages, 6 figures, To appear in Phys. Rev. B, 2003

References in corpus (3)

• Electronic structure of Millerite NiS
• Metal-insulator Crossover Behavior at the Surface of NiS_2
• Electronic structure of NiS_{1-x}Se_x

Cited by in corpus (6)

• XPS evidence for molecular charge-transfer doping of graphene
• Unusual superexchange pathways in a Ni triangular lattice of NiGa${}_2$S${}_4$ with negative charge-transfer energy
• Direct observation of the bandwidth control Mott transition in the NiS${}_{2-x}$Se${}_x$ multiband system
• Dimensionality dependent electronic structure of the exfoliated van der Waals antiferromagnet NiPS${}_3$
• Structural investigation of the insulator-metal transition in NiS${}_{2-x}$Se${}_x$ compounds
• The role of Coulomb interaction on the electronic properties of monolayer NiX${}_2$ (X = S, Se): A DFT+U+V study