Electron interaction with domain walls in antiferromagnetically coupled multilayers

Abstract

For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power law with the exponent about 0.7 to 1. This behavior can not be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the nonuniform gauge fields caused by the domain walls.

5 pages with 3 figures

References in corpus (7)

• Weak Antilocalization and Spin Precession in Quantum Wells
• Resistivity due to a Domain Wall in Ferromagnetic Metal
• Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires
• Magnetoresistance, Micromagnetism, and Domain Wall Scattering in Epitaxial hcp Co Films
• Ballistic electron transport through magnetic domain walls
• Domain walls and the conductivity of mesoscopic ferromagnets
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Cited by in corpus (2)

• Structural, magnetic, and electrical properties of collinear antiferromagnetic heteroepitaxy cubic Mn${}_3$Ga thin films
• Theory of Domain-Wall Magnetoresistance in Metallic Antiferromagnets