Spin injection and electric field effect in degenerate semiconductors
arXiv:cond-mat/0306544 · doi:10.1103/PhysRevB.69.165305
Abstract
We analyze spin-transport in semiconductors in the regime characterized by (intermediate to degenerate), where is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped semiconductor structures used in most experiments; we demonstrate that, at the same time, it corresponds to the regime in which carrier-carrier interactions assume a relevant role. Starting from a general formulation of the drift-diffusion equations, which includes many-body correlation effects, we perform detailed calculations of the spin injection characteristics of various heterostructures, and analyze the combined effects of carrier density variation, applied electric field and Coulomb interaction. We show the existence of a degenerate regime, peculiar to semiconductors, which strongly differs, as spin-transport is concerned, from the degenerate regime of metals.
arXiv commentVersion accepted for publication in Phys. Rev. B
References in corpus (6)
- Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
- Spin diffusion and injection in semiconductor structures: Electric field effects
- Spin diffusion in doped semiconductors
- Coulomb interaction effects in spin-polarized transport
- Spin diffusion in doped semiconductors: the role of Coulomb interactions
- Exact exchange-correlation potential for a time-dependent two electron system