Optimization of the extraordinary magnetoresistance in semiconductor-metal hybrid structures for magnetic-field sensor applications

Abstract

Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite element method and compare our results with experimental data. In particular, we investigate the important effect of the contact resistance ${\rho }_c$ between the semiconductor and the metal on the EMR effect. Introducing a realistic ${\rho }_c=3.5\times 10^{-7}\Omega {\mathrm{cm}}^2$ in our model we find that at room temperature this reduces the EMR by 30% if compared to an analysis where ${\rho }_c$ is not considered.

4 pages; manuscript for MSS11 conference 2003, Nara, Japan