X-ray-induced electrical conduction in the insulating phase of thiospinel CuIr2S4
arXiv:cond-mat/0304256 · doi:10.1016/S0038-1098(03)00298-9
Abstract
Effects of x-ray irradiation on the crystal structure and the electrical resistance were examined at low temperatures for the insulating phase of spinel compound CuIr2S4. We found that the resistance decreases by more than five decades by irradiation at 8.5 K. The structural change from triclinic to tetragonal was observed at the same time. The x-ray-induced conductance is deduced to result from the destruction of Ir4+ dimers formed in the insulating phase. Slow relaxation of the resistance in the x-ray-induced state is also reported.
18 pages with 6 figures, pdf format, to be published in Solid State Commun
References in corpus (1)
Cited by in corpus (6)
- Optical study of the metal-insulator transition in CuIrS crystals
- In-gap state and effect of light illumination in CuIrS probed by photoemission spectroscopy
- X-ray induced electronic structure change in CuIrS
- First-order kinetics bottleneck during photoinduced ultrafast insulator-metal transition in 3D orbitally-driven Peierls insulator CuIrS
- Orbitally-driven insulator-metal transition in CuIrS: Temperature dependent transient reflectivity study
- Reexamination of the charge-ordered dimer pattern in the spinel compound CuIr2S4 using single-crystal synchrotron x-ray diffraction