The enhancement of ferromagnetism in uniaxially stressed diluted magnetic semiconductors

Abstract

We predict a new mechanism of enhancement of ferromagnetic phase transition temperature $T_c$ in uniaxially stressed diluted magnetic semiconductors (DMS) of p-type. Our prediction is based on comparative studies of both Heisenberg (inherent to undistorted DMS with cubic lattice) and Ising (which can be applied to strongly enough stressed DMS) models in a random field approximation permitting to take into account the spatial inhomogeneity of spin-spin interaction. Our calculations of phase diagrams show that area of parameters for existence of DMS-ferromagnetism in Ising model is much larger than that in Heisenberg model.

Accepted for publication in Phys. Rev. B

References in corpus (2)

• Ferromagnetic semiconductors
• Suppression of carrier induced ferromagnetism by composition and spin fluctuations in diluted magnetic semiconductors

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