Nernst Effect in Electron-Doped PrCeCuO
arXiv:cond-mat/0303469 · doi:10.1103/PhysRevB.68.054520
Abstract
The Nernst effect of PrCeCuO (x=0.13, 0.15, and 0.17) has been measured on thin film samples between 5-120 K and 0-14 T. In comparison to recent measurements on hole-doped cuprates that showed an anomalously large Nernst effect above the resistive T and H \cite{xu,wang1,wang2,capan}, we find a normal Nernst effect above T and H for all dopings. The lack of an anomalous Nernst effect in the electron-doped compounds supports the models that explain this effect in terms of amplitude and phase fluctuations in the hole-doped cuprates. In addition, the H(T) determined from the Nernst effect shows a conventional behavior for all dopings. The energy gap determined from H(0) decreases as the system goes from under-doping to over-dopingin agreement with the recent tunnelling experiments.
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