Glass Transition in a Two-Dimensional Electron System in Silicon

Abstract

Large fluctuations of conductivity with time are observed in a low-mobility two-dimensional electron system in silicon at low electron densities $n_s$ and temperatures. A dramatic increase of the noise power ($\propto 1/f^{\alpha }$) as $n_s$ is reduced below a certain density $n_g$, and a sharp jump of $\alpha$ at $n_s\approx n_g$, are attributed to the freezing of the electron glass at $n_s=n_g$. The data strongly suggest that glassy dynamics persists in the metallic phase.

EP2DS-14 conference