Effects of Boron Purity, Mg Stoichiometry and Carbon Substitution on Properties of Polycrystalline MgB
arXiv:cond-mat/0212385 · doi:10.1016/S0921-4534(02)02326-2
Abstract
By synthesizing MgB using boron of different nominal purity we found values of the residual resistivity ratio () from 4 to 20, which covers almost all values found in literature. To obtain high values of , high purity reagents are necessary. With the isotopically pure boron we obtained the highest 20 for the stoichiometric compound. We also investigated MgB samples with 0.8 1.2. For the range MgB up to MgB we found average values of between 14 and 24. For smaller variations in stoichiometry () . All of our data point to the conclusion that high () and low () are intrinsic material properties associated with high purity MgB. In addition we have performed initial work on optimizing the formation of carbon doped MgB via the use of BC. Nearly single phase material can be formed by reaction of nominal Mg(BC) for 24 hours at . The for this composition is between and (depending on criterion).
arXiv commentaccepted to Physica C, special MgB2 issue
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