Electronic and Optical Properties of ZnIn${}_2$Te${}_4$

Abstract

Band structure and optical properties of defect- Chalcopyrite type semiconductor ZnIn${}_2$Te${}_4$ have been studied by TB-LMTO first principle technique. The optical absorption calculation suggest that ZnIn${}_2$Te${}_4$ is a direct-gap semiconductor having a band gap of 1.40 eV., which confirms the experimentally measured value. The calculated complex dielectric-function $\epsilon (E)={\epsilon }_1(E)+i{\epsilon }_2(E)$ reveal distinct structures at energies of the critical points in the Brillouin zone.

12 pages, 6 figs