Formation of InAs Self-Assembled Quantum Rings on InP
arXiv:cond-mat/0210631 · doi:10.1063/1.1560868
Abstract
Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1 nm thick InP layer. The anisotropic material redistribution occurs within a few minutes and leads to a change from lens-like to elongated ring-like islands. The shape transformation is not accompanied by dot material compositional change. The formation of InAs/InP quantum rings disagrees with a previous model of InAs/GaAs ring formation that assumes that the driving force for the dot to ring transformation is the difference in surface diffusion velocity of indium and gallium atoms.
arXiv comment13 pages, including 2 figures and 1 table. Submitted to Appl. Phys. Lett
References in corpus (4)
Cited by in corpus (6)
- Controllable Continuous evolution of electronic states in a single quantum ring
- Tuning Pairing Amplitude and Spin-Triplet Texture by Curving Superconducting Nanostructures
- Giant optical anisotropy in cylindrical self-assembled InAs/GaAs quantum rings
- Tuning InP self-assembled quantum structures to telecom wavelength: a versatile original InP(As) nanostructure "workshop"
- Linear dynamic polarizability and absorption spectrum of an exciton in a quantum ring in a magnetic field
- Arbitrary mixture of two charged interacting particles in a magnetic Aharonov-Bohm ring: persistent currents and Berry's phases