Origin of the efficient light emission from inversion domain boundaries in GaN

Abstract

Intentionally-produced inversion domain boundaries in GaN have been reported to be highly efficient recombination centers. Here I report a rationale for this phenomenon based on ab initio density-functional calculations. I also propose a model, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces.

RevTeX 4 pages, 4 eps figures

References in corpus (2)

• First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: comparison of local and gradient-corrected density-functional theory
• Non-linear macroscopic polarization in III-V nitride alloys

Cited by in corpus (1)

• Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)