Optical response and spin relaxation in semiconductor systems under excitation with arbitrary polarization
arXiv:cond-mat/0209389 · doi:10.1002/1521-3951(200211)234:1<385::AID-PSSB385>3.0.CO;2-7
Abstract
The equations-of-motion for the density matrix are derived in a multiband model to describe the response of semiconductors (bulk or quantum well structures) under optical excitation with arbitrary polarization. The multiband model used, comprising the twofold conduction band and the fourfold topmost valence band (or heavy- and light-hole states), incorporates spin-splitting of the single-particle states. The interaction terms include besides the direct Coulomb coupling between carriers also the electron-hole exchange interaction, which together with the spin-splitting terms is responsible for spin relaxation. Applying the Hartree-Fock truncation scheme leads to a set of coherent semiconductor Bloch equations for the multiband case. This concept provides the theoretical frame for describing phenomena connected with optical response under excitation with arbitrary light polarization and spin relaxation: polarized optical response, polarization dynamics of VCSELs, spin relaxation, and the circular photovoltaic effect.
11 pages, no figures
References in corpus (1)
Cited by in corpus (7)
- Pure spin current from one-photon absorption of linearly polarized light in noncentrosymmetric semiconductors
- Phonon-induced decoherence for a quantum dot spin qubit operated by Raman passage
- Deduction of Pure Spin Current from Spin Linear and Circular Photogalvanic Effect in Semiconductor Quantum Wells
- A microscopic approach to spin dynamics: about the meaning of spin relaxation times
- An extension of the optical Bloch equations: a microscopic approach including spin and carrier-phonon scattering
- Quasi-equilibrium optical nonlinearities in spin-polarized GaAs
- The spin-dependent semiconductor Bloch equations: a microscopic theory of Bir-Aronov-Pikus spin-relaxation