A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu

Abstract

Successful synthesis of room-temperature ferromagnetic semiconductors, Zn${}_{1-x}$Fe${}_x$O, is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn${}_{1-x}$Fe${}_x$O was found to be additional Cu doping. A transition temperature as high as 550 K was obtained in Zn${}_{0.94}$Fe${}_{0.05}$Cu${}_{0.01}$O; the saturation magnetization at room temperature reached a value of $0.75{\mu }_{\mathrm{B}}$ per Fe. Large magnetoresistance was also observed below $100$K.

11 pages, 4 figures; to appear in Appl. Phys. Lett

Cited by in corpus (13)

• Ferromagnetism in substituted zinc oxide
• A search for ferromagnetism in transition-metal-doped piezoelectric ZnO
• Magnetic interactions in transition metal doped ZnO : An abinitio study
• Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics
• Magnetic oxide semiconductors
• Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films
• Crystallographically oriented magnetic ZnFe2O4 nanoparticles synthesized by Fe implantation into ZnO
• Spintronic and electrochromic device based on Li-intercalated transition-metal doped anatase $\mathrm{Ti}{\mathrm{O}}_2$
• Vibrationally Induced Magnetism in Supramolecular Aggregates
• Chiral Phonons Enhance Ferromagnetism
• Possible magnetic-field-induced voltage and thermopower in diluted magnetic semiconductors
• Local structure of Fe impurity atoms in ZnO: bulk versus surface
• Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies