Electric Field Induced Kondo Tunneling Through Double Quantum Dot
arXiv:cond-mat/0206503
Abstract
It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the renormalization group technique we derive scaling equations and calculate the differential conductance as a function of an auxiliary dc-bias for parallel DQD.
4 pages, RevTeX, 4 eps figures included