paper

Josephson effects in MgB2 meta masked ion damage junctions

arXiv:cond-mat/0206207 · doi:10.1109/TASC.2003.814157

Abstract

Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB $_{2}$ with T $_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB $_{2}$ metal masked ion damage junctions are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.

12 pages, 4 figures, RevTeX4, submitted to APL