Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations

Abstract

We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a direct measurement of the parallel conductance and no ad hoc assumptions on the symmetry of the transistors are necessary. Thus we can make a comparison between our data and theoretical predictions without any adjustable parameter. Even for rather weakly conducting transistors significant deviations from the perturbative results are noted. On the other hand, path integral Monte Carlo calculations show remarkable agreement with experiments for the whole range of temperatures and conductances.

8 pages, 7 figures, revtex4, corrected typos, submitted to PRB

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Cited by in corpus (9)

• Quantum-fluctuation effects on the thermopower of a single-electron transistor
• Full Current Statistics in the Regime of Weak Coulomb Interaction
• Charge relaxation resistance in the Coulomb blockade problem
• Two-loop approximation in the Coulomb blockade problem
• Coulomb Blockade and Super Universality of the Theta-Angle
• The problem of "macroscopic charge quantization" in single-electron devices
• Coulomb blockade in two island systems with highly conductive junctions
• Transport in metallic multi-island Coulomb blockade systems: A systematic perturbative expansion in the junction transparency
• Grand canonical partition function of a serial metallic island system