Temperature Dependence of Hall Response in Doped Antiferromagnets
arXiv:cond-mat/0203518 · doi:10.1103/PhysRevB.66.020408
Abstract
Using finite-temperature Lanczos method the frequency-dependent Hall response is calculated numerically for the t-J model on the square lattice and on ladders. At low doping, both the high-frequency RH* and the d.c. Hall coefficient RH0 follow qualitatively similar behavior at higher temperatures: being hole-like for T > Ts~1.5J and weakly electron-like for T < Ts. Consistent with experiments on cuprates, RH0 changes, in contrast to RH*, again to the hole-like sign below the pseudogap temperature T*, revealing a strong temperature variation for T->0.
LaTeX, 4 pages, 4 figures, submitted to PRL
References in corpus (1)
Cited by in corpus (5)
- Strong charge fluctuations manifested in the high-temperature Hall coefficient of high-T_c cuprates
- Low Temperature Lanczos Method
- DC Hall coefficient of the strongly correlated Hubbard model
- Finite temperature properties of the triangular lattice t-J model, applications to NaCoO
- Numerical approaches for calculating the low-field dc Hall coefficient of the doped Hubbard model