Nonlinear spin-polarized transport through a ferromagnetic domain wall

Abstract

A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands decreases the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.

5 pages, 3 figures

References in corpus (1)

• Unipolar spin diodes and transistors

Cited by in corpus (9)

• Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions
• Electrical Transport Across an Individual Magnetic Domain Wall in (Ga,Mn)As Microdevices
• A Circuit Model for Domain Walls in Ferromagnetic Nanowires: Application to Conductance and Spin Transfer Torques
• Heterostructure unipolar spin transistors
• Effect of electrical bias on spin transport across a magnetic domain wall
• One dimensional gapless magnons in a single anisotropic ferromagnetic nanolayer
• Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices
• Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As
• Nonequilibrium interacting electrons in a ferromagnet