Resonant Raman scattering off neutral quantum dots

Abstract

Resonant inelastic (Raman) light scattering off neutral GaAs quantum dots which contain a mean number, N=42, of electron-hole pairs is computed. We find Raman amplitudes corresponding to strongly collective final states (charge-density excitations) of similar magnitude as the amplitudes related to weakly collective or single-particle excitations. As a function of the incident laser frequency or the magnetic field, they are rapidly varying amplitudes. It is argued that strong Raman peaks should come out in the spin-density channels, not related to valence-band mixing effects in the intermediate states.

Accepted in Physical Review B

References in corpus (1)

• Spin polarization and magneto-luminescence of confined electron-hole systems

Cited by in corpus (5)

• Electronic Raman scattering in quantum dots revisited
• Semiquantitative theory of electronic Raman scattering from medium-size quantum dots
• Exact-Diagonalization Studies of Inelastic Light Scattering in Self-Assembled Quantum Dots
• Inelastic light scattering and the off-resonance approximation
• Inelastic light scattering and the excited states of many-electron quantum dots