Study of the Ce(RhPd)Si alloy: evidence for itinerant character of the magnetic order in CeRhSi
arXiv:cond-mat/0112495
Abstract
We present electrical resistivity and specific heat measurements of alloys on the Rh rich side of the phase diagram of the Ce(RhPd)Si system and compare the results with those obtained at intermediate and low Rh concentrations. The analysis of the x-evolution of the entropy and the scaling behaviour of and clearly confirm a separation of the magnetic phase diagram into two regions. The region , showing a concentration independent characteristic temperature , while for decreases down to . This characteristic temperature is obtained by scaling the results as a function of the reduced temperature . At low Pd-content, decreases very rapidly from in pure CeRhSi to at x=0.1. With higher Pd concentration it stabilized at whereas the magnitude of the anomalies in and in the susceptibility around are further reduced and disappear at . This is in contrast to the behavior found on the Pd-rich side, where decreases continuously to zero with increasing Rh content. The pronounced differences observed between both phase boundaries and the drastic effect of doping on the Rh rich side suggest an itinerant character in CeRh Si, in contrast to the localized character of CePdSi. A further evidence for the itinerant character in CeRhSi is given by the dependence observed for , which scales with of the prototype itinerant compound YCo.
7 pages, 7 figures