Spin-polarized tunneling through a thin-film
arXiv:cond-mat/0112431 · doi:10.1016/S0375-9601(00)00340-6
Abstract
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated with the use of the model. Electron-spin polarization is evaluated in the tunnel current which comes from the different densities of spin-up, spin-down conduction electrons at the Fermi level in a ferromagnetic semiconductor (EuS). Calculated results are compared with some tunneling experiments.
5 pages, LaTex, 2 EPS figures