Exciton/free-carrier plasma in GaN-based quantum wells: Scattering and screening
arXiv:cond-mat/0111390 · doi:10.1002/1521-396X(200101)183:1<87::AID-PSSA87>3.0.CO;2-O
Abstract
The degree of ionisation of a two-dimensional electron-hole plasma is calculated in the low-density (Boltzmann) limit. The electron-hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory is applied to exciton/free-carrier plasma in GaN-based quantum wells at room temperature.
3 pages, 1 figure