Micromechanical electrometry of single-electron transistor island charge
arXiv:cond-mat/0109208 · doi:10.1016/S0921-4526(02)00529-X
Abstract
We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons.
To appear in Phonons 2001 Proceedings (Physica B)