Adiabatic stabilization of excitons in intense terahertz laser
arXiv:cond-mat/0109038 · doi:10.1103/PhysRevB.66.033106
Abstract
High-precise calculation of near-infrared absorption and transient spectra in bulk semiconductors irradiated by an intense terahertz (THz) laser shows that, the ionization rate of the ground-state exciton, probed through the dynamic Fano resonance, may decrease with the increase of the THz laser intensity. This counterintuitive effect indicates the excitons are stabilized against the field-ionization. The much lower Rydberg energy and ``atomic unit'' of laser intensity for excitons, and the possibility of creating excitons from the ``vacuum state'' allow observing the excitonic stabilization in experiments, in contrast to the case of atomic stabilization.
4 pages and 4 figures