Electronic properties of antidot lattices fabricated by atomic force lithography
arXiv:cond-mat/0108520 · doi:10.1063/1.1432767
Abstract
Antidot lattices were fabricated by atomic force lithography using local oxidation. High quality finite 20 x20 lattices are demonstrated with periods of 300 nm. The low temperature magnetoresistance shows well developed commensurability oscillations as well as a quenching of the Hall effect around zero magnetic field. In addition, we find B periodic oscillations superimposed on the classical commensurability peaks at temperatures as high as 1.7 K. These observations indicate the high electronic quality of our samples.
Appl. Phys. Lett., in print
References in corpus (4)
- Phase--coherence Effects in Antidot Lattices: A Semiclassical Approach to Bulk Conductivity
- In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography
- Transport properties of quantum dots with hard walls
- Shifting a Quantum Wire through a Disordered Crystal: Observation of Conductance Fluctuations in Real Space