Ab-initio calculation of optical absorption in semiconductors: A density-matrix description
arXiv:cond-mat/0108325 · doi:10.1103/PhysRevB.64.205305
Abstract
We show how to describe Coulomb renormalization effects and dielectric screening in semiconductors and semiconductor nanostructures within a first-principles density-matrix description. Those dynamic variables and approximation schemes which are required for a proper description of dielectric screening are identified. It is shown that within the random-phase approximation the direct Coulomb interactions become screened, with static screening being a good approximation, whereas the electron-hole exchange interactions remain unscreened. Differences and similarities of our results with those obtained from a corresponding GW approximation and Bethe-Salpeter equation Green's function analysis are discussed.
10 pages, to be published in Physical Review B