Critical Behaviour near the Mott Metal-Insulator Transition in a Two-band Hubbard Model

Abstract

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping is calculated analytically as a function of the on-site Coulomb interaction $U$ at the $d$-orbital and the charge-transfer energy $\Delta$ between the $d$- and $p$-orbitals. Critical behaviour of the quasiparticle weight is also obtained analytically as a function of $U$ and $\Delta$. The analytic results are in good agreement with the numerical results of the exact diagonalization method.

10 pages, 8 figures

References in corpus (1)

• Critical behaviour near the metal-insulator transition of a doped Mott insulator

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