Pressure dependent thermoelectric power of MgB superconductor
arXiv:cond-mat/0104454
Abstract
We have measured temperature dependence of thermoelectric power (TEP) on MgB superconductor under hydrostatic pressure. The sign and temperature dependence of TEP shows metallic hole carriers are dominant with activation type contribution at higher temperature. TEP increases with pressure while decrease with ratio -0.136 K/kbar. The data are discussed in consideration of carriers from different bands and anisotropy of compressibility.
5 pages, 5 figures