Temperature dependence of current self-oscillations and electric field domains in sequential tunneling doped superlattices

Abstract

We examine how the current--voltage characteristics of a doped weakly coupled superlattice depends on temperature. The drift velocity of a discrete drift model of sequential tunneling in a doped GaAs/AlAs superlattice is calculated as a function of temperature. Numerical simulations and theoretical arguments show that increasing temperature favors the appearance of current self-oscillations at the expense of static electric field domain formation. Our findings agree with available experimental evidence.

7 pages, 5 figures

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• Chaos in resonant-tunneling superlattices
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Cited by in corpus (4)

• Photon-assisted transport in semiconductor nanostructures
• Nonlinear stochastic discrete drift-diffusion theory of charge fluctuations and domain relocation times in semiconductor superlattices
• Spin and charge thermopower of resonant tunneling diodes
• Photoassisted dynamical transport in multiple quantum wells