Hall-conductivity sign change and fluctuations in amorphous Nb${}_x$Ge${}_{1-x}$ films

Abstract

The sign change in the Hall conductivity has been studied in thin amorphous Nb${}_{1-x}$Ge${}_x(x\approx$0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower values (from above to below the mean-field transition field $H_{c2}$) with increasing film thickness. This effect can be understood in terms of a competition between a positive normal and a negative fluctuation contribution to the Hall conductivity.

5 pages, 4 figures, to appear in Phys. Rev. B

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