Bosonization Theory of Excitons in One-dimensional Narrow Gap Semiconductors

Abstract

Excitons in one-dimensional narrow gap semiconductors of anti-crossing quantum Hall edge states are investigated using a bosonization method. The excitonic states are studied by mapping the problem into a non-integrable sine-Gordon type model. We also find that many-body interactions lead to a strong enhancement of the band gap. We have estimated when an exciton instability may occur.

4pages, 1 figure, to appear in Phys. Rev. B Brief Reports

Cited by in corpus (9)

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• Quantum railroads and directed localization at the juncture of quantum Hall systems
• Tunneling in Fractional Quantum Hall line junctions
• Explanation of the tunneling phenomena between the edges of two lateral quantum Hall systems
• Charge Density Wave-Assisted Tunneling Between Hall Edge States
• Optical conductivity of one-dimensional narrow-gap semiconductors