Tuning a Resonance in the Fock Space: Optimization of Phonon Emission in a Resonant Tunneling Device

Abstract

Phonon-assisted tunneling in a double barrier resonant tunneling device can be seen as a resonance in the electron-phonon Fock space which is tuned by the applied voltage. We show that the geometrical parameters can induce a symmetry condition in this space that can strongly enhance the emission of longitudinal optical phonons. For devices with thin emitter barriers this is achieved by a wider collector's barrier.

4 pages, 3 figures. Figure 1 changed, typos corrected

References in corpus (5)

• Fano Resonances in Electronic Transport through a Single Electron Transistor
• The effect of inelastic processes on tunneling
• Landauer Theory, Inelastic Scattering and Electron Transport in Molecular Wires
• Inelastic Quantum Transport
• Self-organization in a phonon laser

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