Design of a semiconductor ferromagnet in a quantum dot artificial crystal

Abstract

We present the theoretical design of quantum dot (QD) artificial ferromagnetic crystals. The electronic structure calculations based on local spin density approximation (LSDA) show that our designed QD artificial crystal from a structure comprising the crossing 0.104-micrometer-wide InAs quantum wires (an effective Kagome lattice) has flat band characteristics. Our examined QD artificial crystal has the ferromagnetic ground state when the flat band is half-filled, even though it contains no magnetic elements. The ferromagnetic and the paramagnetic state can be freely switched by changing the electron filling via a gate voltage.

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