Deviations from Matthiessen's Rule for $\mathrm{SrRu}{\mathrm{O}}_3$ and $\mathrm{CaRu}{\mathrm{O}}_3$

Abstract

We have measured the change in the resistivity of thin films of $\mathrm{SrRu}{\mathrm{O}}_3$ and $\mathrm{CaRu}{\mathrm{O}}_3$ upon introducing point defects by electron irradiation at low temperatures, and we find significant deviations from Matthiessen's rule. For a fixed irradiation dose, the induced change in resistivity {\it decreases} with increasing temperature. Moreover, for a fixed temperature, the increase in resistivity with irradiation is found to be {\it sublinear}. We suggest that the observed behavior is due to the marked anisotropic scattering of the electrons together with their relatively short mean free path (both characteristic of many metallic oxides including cuprates) which amplify effects related to the Pippard ineffectiveness condition.

References in corpus (3)

• Transport Properties, Thermodynamic Properties, and Electronic Structure of SrRuO3
• Electronic structure and magnetism in Ru based perovskites
• Non-Fermi liquid behavior of SrRuO_3 -- evidence from infrared conductivity

Cited by in corpus (6)

• Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering
• Less is more: more scattering leading to less resistance
• Separated transport relaxation scales and interband scattering in SrRuO${}_3$, CaRuO${}_3$, and Sr${}_2$RuO${}_4$ thin films
• Sub-THz momentum drag and violation of Matthiessen's rule in an ultraclean ferromagnetic SrRuO${}_3$ metallic thin film
• Determination of the resistivity anisotropy of SrRuO${}_3$ by measuring the planar Hall effect
• Field induced resistivity anisotropy in SrRuO3 films