Critical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition

Abstract

The scaling behavior of the thermoelectric transport properties in disordered systems is studied in the energy region near the metal-insulator transition. Using an energy-dependent conductivity $\sigma$ obtained experimentally, we extend our linear-response-based transport calculations in the three-dimensional Anderson model of localization. Taking a dynamical scaling exponent $z$ in agreement with predictions from scaling theories, we show that the temperature-dependent $\sigma$, the thermoelectric power $S$, the thermal conductivity $K$ and the Lorenz number $L_0$ obey scaling.

presented at the 25th International Conference on the Physics of Semiconductors, 17-22 Sept., Osaka, Japan