Resonant Tunnelling through InAs Quantum Dots in Tilted Magnetic Fields: Experimental Determination of the g-factor Anisotropy
arXiv:cond-mat/0009348 · doi:10.1002/(SICI)1521-3951(200104)224:3<685::AID-PSSB685>3.3.CO;2-P
Abstract
We have determined the Landé factor g* in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g*_\parallel = 0.75 for the specific dot investigated. When the magnetic field is tilted away by theta from the growth axis, g* gradually increases up to a value g*_\perp = 0.92 when B \perp z. Its angular dependence is found to follow the phenomenological behaviour g* (theta) = \sqrt{(g*_\parallel cos(theta)^2 + (g*_\perp sin(theta)^2}.
4 pages, 3 figures, International Conference on Semiconductor Quantum Dots July 31 - August 3, 2000, Munich, Germany