Gauge factor of thick film resistors: outcomes of the variable range hopping model

C. Grimaldi; P. Ryser; S. Straessler

doi:10.1063/1.1290738

paper

Gauge factor of thick film resistors: outcomes of the variable range hopping model

arXiv:cond-mat/0004075 · doi:10.1063/1.1290738

Abstract

Despite a large amount of data and numerous theoretical proposals, the microscopic mechanism of transport in thick film resistors remains unclear. However, recent low temperature measurements point toward a possible variable range hopping mechanism of transport. Here we examine how such a mechanism affects the gauge factor of thick film resistors. We find that at sufficiently low temperatures $T$ , for which the resistivity follows the Mott's law $R (T) \sim exp (T_{0} / T)^{1/4}$ , the gauge factor GF is proportional to $(T_{0} / T)^{1/4}$ . Moreover, the inclusion of Coulomb gap effects leads to $GF \sim (T_{0}^{'} / T)^{1/2}$ at lower temperatures. In addition, we study a simple model which generalizes the variable range hopping mechanism by taking into account the finite mean inter-grain spacing. Our results suggest a possible experimental verification of the validity of the variable range hopping in thick film resistors.

7 pages, 3 eps figures, submitted to Journal of Applied Physics

Gauge factor of thick film resistors: outcomes of the variable range hopping model

Abstract

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