Ion-Beam Induced Current in High-Resistance Materials
arXiv:cond-mat/0002264 · doi:10.1002/(SICI)1521-396X(200001)177:1<267::AID-PSSA267>3.3.CO;2-8
Abstract
The peculiarities of electric current in high-resistance materials, such as semiconductors or semimetals, irradiated by ion beams are considered. It is shown that after ion--beam irradiation an unusual electric current may arise directed against the applied voltage. Such a negative current is a transient effect appearing at the initial stage of the process. The possibility of using this effect for studying the characteristics of irradiated materials is discussed. A new method for defining the mean projected range of ions is suggested.
1 file, 7 pages, RevTex, no figures