Anomalous Hopping Exponents of Ultrathin Films of Metals

Abstract

The temperature dependence of the resistance R(T) of ultrathin quench-condensed films of Ag, Bi, Pb and Pd has been investigated. In the most resistive films, R(T)=Roexp(To/T)^x, where x=0.75. Surprisingly, the exponent x was found to be constant for a wide range of Ro and To in all four materials, possibly implying a consistent underlying conduction mechanism. The results are discussed in terms of several different models of hopping conduction.

arXiv comment6 pages, 5 figures

References in corpus (1)

• Effect of screening of the Coulomb interaction on the conductivity in the quantum Hall regime

Cited by in corpus (8)

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• Electrical transport studies of quench condensed Bi films at the initial stage of film growth: Structural transition and the possible formation of electron droplets
• Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime
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• Onset of nonequilibrium in a driven Anderson insulator