Development of a fabrication-to-benchtop process for SiN-based quantum devices

Abstract

Silicon nitride has emerged as a key material for the advancement of future quantum communication and computational devices. However, challenges persist in establishing a comprehensive development process, spanning from fabrication to optical characterization, essential for advancing these devices to their next stage of potential. Maintaining control over the entire process, from start to finish, alongside device modeling, enables more efficient and timely iteration and optimization. Here we introduce a fabrication-to-benchtop process. We employ an in-house stoichiometric recipe for device fabrication and conduct comprehensive characterization of optical losses and material properties. Understanding and controlling the refractive index of the device are vital for predicting device geometries and group indices. Implementing the refractive indices of our fabricated devices, we simulate microring resonators and demonstrate their application in generating optical solitons.

References in corpus (12)

• Quantum Machine Learning
• Microresonator solitons for massively parallel coherent optical communications
• Chip-to-chip quantum teleportation and multi-photon entanglement in silicon
• On-Chip Optical Squeezing
• Overcoming Si3N4 film stress limitations for High Quality factor ring resonators
• On the experimental verification of quantum complexity in linear optics
• Near-degenerate quadrature-squeezed vacuum generation on a silicon-nitride chip
• An On-chip Homodyne Detector for Measuring Quantum States and Generating Random Numbers
• NbTiN superconducting nanowire detectors for visible and telecom wavelengths single photon counting on Si3N4 photonic circuits
• Quantum key distribution with dissipative Kerr soliton generated by on-chip microresonators
• High-Rate Photon Pairs and Sequential Time-Bin Entanglement with Si${}_3$N${}_4$ Ring Microresonators
• Transverse mode-encoded quantum gate on a silicon photonic chip