Interface-Controlled Defect Engineering in TiN/TaN Superlattices for Enhanced Hardness and Fracture Toughness

Abstract

TiNTaN superlattice coatings were designed to investigate how atomic-scale interface chemistry and defect-stabilized TaN layers govern hardness and fracture toughness. Guided by first-principles predictions identifying TaN-based layers as more damage tolerant than TiN, coherent superlattices with a bilayer period of 6 nm were synthesized by reactive magnetron sputtering and interfacially doped with C, B, or Si. Structural and chemical analyses reveal coherent fcc architectures with well-defined interfaces. Si segregates preferentially to the interfaces while incorporating into both TiN and TaN, whereas C and B predominantly diffuse into the TaN layers, modifying coherency strain, bonding, and defect populations. Consequently, hardness increases from 34 GPa for the undoped superlattice to 41 GPa for the Si-doped architecture, whereas fracture toughness increases from 2.8 to 4.0 MPam0.5 for the B-doped superlattice. First-principles calculations show that vacancy-stabilized TaxNy enhances elastic compliance and elastic contrast rather than intrinsic toughness, while the additional toughening induced by B indicates localized defect-assisted energy dissipation at chemically engineered interfaces. Thus, Si maximizes interface strengthening, whereas B provides the most favourable hardness-toughness balance while preserving high hardness, 38 GPa. These findings establish interface chemistry as an additional design parameter for tailoring the mechanical performance of ceramic nitride superlattices.